LIN Research Group

2025

• D. R. Hsieh, Z. Y. Hong, H. E. Luo, W. J. Yeh, J. C. Ni, C. F. Chen, Y. F. Lin, S. T. Lo, and T. S. Chao*; "HfO2-ZrO2 Superlattice HZO Ultra-Thin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention", IEEE Trans. Electron Devices doi.org/10.1109/TED.2025.3544188.

• H. Y. Sung, C. H. Wang, M. P. Lee, Y. C. Lin Y. F. Lin, C. W. Huang, and W. W. Wu*; “Titanium Self-intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy”, Adv. Mater. doi.org/10.1002/adma.202418557.

• S. P. Lin*, A. Ghosh, K. L. Chen, H. L. Hsiao, M. Y. Tsai, and Y. F. Lin*; “Artificial Merkel Discs in van der Waals Heterostructures for Bio-inspired Tactile Sensing”, Mater. Sci. Eng. R Rep. 163, 100926.

• C. Zhang, E. Li, C. Gao, R. Wang, X. Liu, F. Yuan, W. Shi, Y. F. Lin, J. Chu and W. Li*; “Selenium Interface Layers Boost High Mobility and Switch Raitos in van der Waals Electronics”, Nano Lett. 25, 655.

• M. D. Sia, M. Y. Tsai, A. C. Gandhi, Y. C. Wu, T. Fan, L. S. Hao, I. L. Li, S. Z. Chen, C. H. Liu, Y. F. Lin, and C. H. Yeh*; “Two-dimensional Phototransistors with van der Waals Superstructure Contacts for High-preformance Photosensing”, ACS Appl. Mater. & Interface 17, 6521.

• C. F. Chen, T. C. Huang, P. T. Wu, Y. A. Chou, C. T. Wang, S. M. Cheng, S. F. Lin, W. H. Chen, P. Amrit, C. N. Kuo, K. Watanabe, T. Taniguchi, C. L. Lin, C. S. Lue, Y. F. Lin*, and S. T. Lo*; “All-electric Functional PdSe2 Planar-Hall Logic Field-effect Transistors, Adv. Funct. Mater. doi.org/10.1002/adfm.202412896.

2024

• S. M. He, J. Y. Zhuang, C. F. Chen, R. K. Liao, S. T. Lo, Y. F. Lin*, and C. Y. Su*; “Plasma-driven Selenization for Electrical Property Enhancement in Janus 2D Materials”, Small Methods 8, 2400150.

• X. Liu, C. Zhang, E. Li, C. Gao, R. Wang, Y. Liu, F. Liu*, W. Shi, Y. Yuan, J. Sun* Y. F. Lin*, J. Chu and W. Li*; “Ultralow Off-State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors”, Adv. Funct. Mater. 34, 2309642​.

• Y. C. Shen, B. K. Wu, T. S. Tsai, M. Liu, J. H. Chen, T. Y. Yang, R. H. Cyu, C. T. Chen, Y. C. Hsu, C. H. Luo, Y. Q. Huang, Y. R. Peng, C. H. Shen, Y. F. Lin, P. W. Chiu, Y. C. King*, and Y. L. Chueh; “Design of Versatile Top-Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi-Supporting Layers Toward All-Transfer Transition Metal Dichalcogenide Material Based Transistor Array”, Small Sci. 4, 2300144.

2023

• M. P. Lee, C. Gao, M. Y. Tsai, C. Y. Lin, F. S. Yang, H. Y. Sung, C. Zhang, W. Li*, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, C. H. Ho, J. Chu, P. W. Chiu, M. Li*, W. W. Wu*, and Y. F. Lin*; “Silicon-van der Waals Heterointegration for CMOS-compatible Logic-in-memory Design”, Sci. Adv. 9, eadk1597.

• ​M. Y. Tsai, C. T. Huang, C. Y. Lin, M. P. Lee, F. S. Yang, M. Li, Y. M. Chang, K. Watanabe, T. Taniguchi, C. H. Ho, W. W. Wu, M. Yamamoto, J. L. Wu*, P. W. Chiu* and Y. F. Lin*; “A Reconfigurable Transistor and Memory Based on a Two-dimensional Heterostructure and Photoinduced Trapping”, Nat. Electron. 6, 755.

• C. H. Huang, C. Y. Wu, Y. F. Lin, Y. C. Chou* and K. T. Lee; “Wet-Etching-Boosted Charge Storage in 1D Nitride-based Systems for Imitating Biological Synaptic Behaviors”, Adv. Funct. Mater. DOI: 10.1002/adfm.202306030​.

• ​M. Y. Tsai, T. H. Tsai, A. C. Gandhi, H. L. Lu, J. X. Li, P. L. Chen, K. W. Chen, S. Z. Chen, C. H. Chen, C. H. Liu, Y. F. Lin and P. W. Chiu*; “Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain”, ACS Nano. 17, 25037.

• M. Li, H. Liu, R. Zhao, F. S. Yang, M. Chen, Y. Zhuo, C. Zhou*, H. Wang*, Y. F. Lin* and J. Joshua Yang*; “Imperfection-enabled Memristive Switching in van der Waals Materials”, Nat. Electron. 6, 491.

• C. H. Chen, Y. T. Lai, C. F. Chen, P. T. Wu, K. J. Su, S. Y. Hsu, G. J. Dai, Z. Y. Huang, C. L. Hsu, S.Y. Lee, C. H. Shen, H. Y. Chen, C. C. Lee, D. R. Hsieh, Y. F. Lin, T. S. Chao, and S. T. Lo*; “Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching”, Adv. Mater. 35, 2301206.

• Y. H. Chan, C. Y. Lin, Y. C. Chou, A. C. Chang, Y. F. Lin, and Y. Z. Chen*; “Chloride-assisted Synthesis of Tellurene Directly on SiO2/Si Substrates: Growth Mechanism, Thermal properties, and Device Applications”, Mater. Adv. 4, 2008.

• H. W. Deng, Y. T. Teng, M. P. Lee, Y. F. Lin, and W. W. Wu*; “In Suit TEM Observation of Electron-beam-induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor”, Adv. Electron. Mater. 9, 202200994.

2022

• H. W. Deng, Y. T. Teng, M. P. Lee, Y. F. Lin, and W. W. Wu*; “In Suit TEM Observation of Electron-beam-induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor”, Adv. Electron. Mater. doi.org/10.1002/aelm.202200994.

• C. Y. Lin, M. P. Lee, Y. M. Chang*, Y. T. Tseng, F. S. Yang, M. Li, J. Y. Chen, C. F. Chen, M. Y. Tsai, Y. C. Lin, K. Ueno, M. Yamamoto, S. T. Lo, C. H. Lien, P. W. Chiu, K. Tsukagoshi*, W. W. Wu*, and Y. F. Lin*; “Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering”, ACS Appl. Mater. Interfaces. 14, 41156.

• C. F. Chen S. H. Yang, C. Y. Lin* M. P. Lee, M. Y. Tsai F. S. Yang, Y. M. Chang, M. Li, K. C. Lee, K. Ueno, Y. Shi*, C. H. Lien, W. W. Wu, P. W. Chiu, W. Li*, S. T. Lo and, Y. F. Lin*; “Reversible Charge-polarity control for Multioperation-mode Transistors Based on van der Waals Heterostructures”, Adv. Sci. 9, 2106016.

• M. Dai, C. Gao, Q. Nie, Q. Wang, Y. F. Lin, J. Chu and, W. Li*; “Properties, Synthesis, and Device Applications of 2D Layered InSe”, Adv. Mater. Technol. doi.org/10.1002/admt.202200321.

• M. Li, H. W. Lu, S. W. Wang, R. P. Li, J. Y. Chen, W. S. Chuang, F. S. Yang, Y. F. Lin*, C. Y. Chen* and, Y. C. Lai*; “Filling the Gap between Insulator Nanomaterials and Triboelectric Nanogenerators”, Nat. Commun. 13, 938.

• C. Gao, Q. Nie, C. Y. Lin, F. Huang, L. Wang, W. Xia, X. Wang, Z. Hu, M. Li, H. W. Lu, Y. C. Lai*, Y. F. Lin*, J. Chu and, W. Li*; “Touch-modulated van der Waals Heterostructure with Self-writing Power Switch for Synaptic Simulation”, Nano Energy 91, 106659.

• M. D. Siao, A. C. Gandhi, A. K. Sahoo, Y. C. Wu, H. K. Syu, M. Y. Tsai, T. H. Tsai, Y. C. Yang, Y. F. Lin, R. S. Liu and, P. W. Chiu*; “WSe2/WS2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention”, ACS Appl. Mater. Interfaces. 14, 3467.

2021

• (Invited paper) X. Liu, X. Yang, W. Sang, H. Huang, W. Li*, Y. F. Lin* and, J. Chu; “Thin-film Electronics Based on All-2D van der Waals Heterostructures”, J. Inf. Disp. 22, 231.

• S. H. Yang, F. S. Yang, H. L. Tang, M. H. Chiu, K. C. Lee, M. Li, C. Y. Lin, L. J. Li, V. Tang, Y. Xu*, Y. Shi*, C. H. Lien* and, Y. F. Lin*; “Performance Limits and Potential of Multilayer Graphene-Tungsten Diselenide Heterostructures”, Adv. Electron. Mater. 10.1002/aelm.202100355.

• T. H. Tsai, A. K. Sahoo, H. K. Syu, Y. C. Wu, M. Y. Tsai, Y. C. Yang, Y. F. Lin, R. S. Liu, and, P. W. Chiu*; “WSe2/WS2 Nanodot Composite Photodetectors for Fast and Sensitive Light Detection”, ACS Appl. Electron. Mater. 3, 4291.

• C. Sivakumar, G. H. Tsai, P. F. Chung, B. Balraj, Y. F. Lin and M. S. Ho*; “High-quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications”, Nanomaterials 11, 2013.

• M. Y. Tsai, K. C. Lee*, C. Y. Lin, Y. M. Chang, K. Watanabe, T. Taniguchi, C. H. Ho, C. H. Lien, P. W. Chiu* and, Y. F. Lin*; “Photoactive Electro-controlled Visual Perception Memory for Emulating Synaptic Metaplasticity and Hebbian Learning”, Adv. Funct. Mater. 31, 2105345.

• Q. Nie, C. Gao, F. S. Yang, K. C. Lee, C. Y. Lin, X. Wang, C. H. Ho, C. H. Lien, S. P. Lin, M. Li*, Y. F. Lin*, W. Li*, Z. Hu and J. Chu; “Carrier-capture-assisted Optoelectronics Based on van der Waals Materials to Imitate Medicine-acting Metaplasticity”, NPJ 2D Mater. Appl. 5, 60.

• M. D. Siao, Y. C. Lin, T. He, M. Y. Tsai, K. Y. Lee, S. Y. Chang, K. I. Lin, Y. F. Lin, M. Y. Chou, K. Suenaga, and P. W. Chiu*; "Embedment of Multiple Transition Metal Impurities into WS2 Monolayer for Bandstructure Modulation", Small 17, 2007171.

• K. C. Lee, S. Y. Huang, M. Y. Tsai, S. H. Yang, C. Y. Lin, M. Li, Y. M. Chang, K. Watanabe, T. Taniguchi, Y. C. Lai*, S. P. Lin*, P. W. Chiu* and Y. F. Lin*; "Artificial Mechanoreceptor Based on van der Waals Stacking Structure", Matter 4, 1598.

• K. Zhao, J. Zou, F. Huang, C. Gao, X. Wang, W. Li*, W. Tian*, Y. F. Lin*, Z. Hu, and J. Chu; "Asymmetric Au Electrodes-Induced Self-Powered Organic-Inorganic Perovskite Photodetector", IEEE Electron Device Lett. 68, 1149.

• C. S. Yang*, Y. C. Chung*, Y. S. Cheng, Y. C. Hsu, C. F. Chen, N. N. Huang, H. C. Chen*, C. H. Liu*, J. C. Hsu*, Y. F. Lin* and, T. R. Lin*; "Electrically Tunable Plasmonic Biosensors Based on Cavity-Coupled Structure with Graphene", IEEE J. Sel. Top. Quantum Electron. 27, 1.

• M. Li*, F. S. Yang, H. C. Hsu, W. H. Chen, C. N. Ku, J. Y. Chen, S. H. Yang, T. H. Yang, C. Y. Lin, Y. Chou, M. P. Lee, Y. M. Chang, Y. C. Yang, K. C. Lee, Y. C. Chou, C. H. Lien, C. L. Lin, Y. P. Chiu, C. S. Lue*, S. P. Lin* and, Y. F. Lin*; “Defect Engineering in Ambipolar Layered Materials for Mode-Regulable Nociceptor”, Adv. Funct. Mater. 31, 2007587.

• C. Gao, M. P. Lee, M. Li, K. C. Lee, F. S. Yang, C. Y. Lin, K. Watanabe, T. Taniguchi, P. W. Chiu, C. H. Lien, W. W. Wu, S. P. Lin*, W. Li*, Y. F. Lin* and J. Chu; “Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge‐Trap Layered Electronics”, Adv. Funct. Mater. 31, 2005182.

• M. Li, W. Y. Cheng, Y. C. Li, H. M. Wu, Y. C. Wu, H. W. Lu, S. L. Cheng, L. Li, K. C. Chang, H. J. Liu, Y. F. Lin*, L. Y. Lin*, and Y. C. Lai*; “Deformable, Resilient, and Mechanically-durable Triboelectric Nanogenerator based on Recycle Coffee Waste for Wearable Power and Self-powered Smart Sensors”, Nano Energy 79, 105405.

2020

• C. C. Shih, M. H. Huang, C. K. Wan, W. B. Jian*, K. Kono, Y. F. Lin, and C. H. Ho*; “Tuning Interface Barrier in 2D BP/ReSe2 Heterojunctions in Control of Optoelectric Performances and Energy Conversion Efficiencies”, ACS Photonics 7, 2886.

• M. Li, C. Y. Lin, Y. M. Chang, S. H. Yang, M. P. Lee, C. F. Chen, K. C. Lee,  F. S. Yang, Y. Chou, Y. C. Lin, K. Ueno*, Y. Shi, Y. C. Chou*, K. Tsukagoshi*, and Y. F. Lin*; “Facile and Reversible Carrier-Type Manipulation of Layered MoTe2 Toward Long-Term Stable Electronics”, ACS Appl. Mater. Interfaces. 12, 42918.

• K. C. Lee, M. Li*, Y. H. Chang, S. H. Yang, C. Y. Lin, Y. M. Chang, F. S. Yang, K. Watanabe, T. Taniguchi, C. H. Ho, C. H. Lien, S. P. Lin, P. W. Chiu*, and Y. F. Lin*; “Inverse Paired-pulse Facilitation in Neuroplasticity Based on Interface-boosted Charge Trapping Layered Electronics”, Nano Energy 77, 105258.

• F. S. Yang, M. Li*, M. P. Lee, I. Y. Ho, J. Y. Chen, H. Ling, Y. Li, J. K. Chang, S. H. Yang, Y. M. Chang, K. C. Lee, Y. C. Chou, C. H. Ho, W. Li*, C. H. Lien*, and Y. F. Lin*; “Oxidation-boosted Charge Trapping in Ultra-sensitive van der Waals Materials for Artificial Synaptic Features”, Nat. Commun. 11, 2972.

• P. Zhang, N. Cheng, M. Li, B. Zhou, C. Bian, Y. Wei, X. Wang, H. Jiang, L. Bao, Y. F. Lin, Z. Hu*, Y. Du*, and Y. Gong*; “Transition-metal Substitution-induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS2”, ACS Appl. Mater. Interfaces. 12, 18650.

• Y. Xu*, Y. Li, S. Li, F. Balestra, G. Ghibaudo, W. Li, Y. F. Lin, H. Sun*, J. Wan, X. Wang, Y. Guo*, Y. Shi, and Y. Y. Noh*; “Precise Extraction of Charge Carrier Mobility for Organic Transistors”, Adv. Funct. Mater. 30, 1904508.

2019

• J. Li, K. C. Lee, M. H. Hsieh, S. H. Yang, Y. M. Chang, J. K. Chang, C. Y. Lin, and Y. F. Lin*; “Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Souce/Drain Contacts”, Sci. Rep. 9, 20087.

• S. H. Yang, C. Y. Lin, Y. M. Chang, M. Li, K. C. Lee, C. F. Chen, F. S. Yang, C. H. Lien, K. Ueno, K. Watanabe, T. Taniguchi, K. Tsukagoshi*, and Y. F. Lin*; “Oxygen-sensitive Layered MoTe2 Channels for Environmental Detection”, ACS Appl. Mater. Interfaces 11, 47047.

• T. H. Tsai, F. S. Yang, P. H. Ho, Z. Y. Liang, C. H. Lien, C. H. Ho, Y. F. Lin, and P. W. Chiu*; “High-Mobility InSe Transistors: The Nature of Charge Transport”, ACS Appl. Mater. Interfaces 11, 35969.

• S. H. Yang, K. C. Lee, M. Y. Tsai, Y. M. Chang, C. Y. Lin, F. S. Yang, K. Watanabe, T. Taniguchi, C. H. Lien, C. H. Ho, M. Li*, Y. F. Lin*, and Y. C. Lia*; "Multifunctional Full-visible-spectrum Optoelectronics Based on a van der Waals Heterostructure", Nano Energy 66, 104107. 

• C. Y. Lin, J. F. Chen, Y. M. Chang, S. H. Yang, K. C. Lee, W. W. Wu*, W. B. Jian, and Y. F. Lin*; “A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications”, Small 15, 1900865.

• Forest S. S. Chien*, R. A. N. Khasanah, P. T. Lin, Y. F. Lin, and Y. W. Suen*; “Impedance Elements of Significant Junctions in InGaN Light Emitting Diodes Studied by Electric Modulus Spectroscopy”, IEEE Trans. Electron Devises 66, 3393.

• K. C. Lee, S. H. Yang, Y. S. Sung, Y. M. Chang, C. Y. Lin, F. S. Yang, M. Li, K. Watanabe, T. Taniguchi, C. H. Ho*, C. H. Lien*, and Y. F. Lin*; “Analog Circuit Applications Based on all-2D Ambipolar ReSe2 Field-Effect Transistors”, Adv. Funct. Mater. 31, 1809011

• M. Li, F. S. Yang, Y. C. Hsiao, C. Y. Lin, H. M. Wu, S. H. Yang, H. R. Li, C. H. Lien, C. H. Ho, H. J. Liu, W. Li*, Y. F. Lin*, and Y. C. Lai*; “Low-Voltage Operational, Low-Power Consuming and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics”, Adv. Funct. Mater. 29, 1809119.

• S. H. Yang, Y. T. Yao, Y. Xu, C. Y. Lin, Y. M. Chang, Y. W. Suen, H. Sun, C. H. Lien*, W. Li,* and Y. F. Lin*; “Atomically Thin van der Waals Tunnel Field-Effect Transistors and Its Potential for Applications”, Nanotechnology 30, 105201.

2018

• M. K. Li, T. P. Chen, Y. F. Lin*, C. M. Raghavan, W. L. Chen, S. H. Yang, R. Sankar, C. W. Luo, Y. M. Chang, and C. W. Chen*; “Intrinsic Carrier Transport of Phase-Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals”, Small 14, 1803763.

• C. H. Chen, W. Li, Y. M. Chang, C. Y. Lin, S. H. Yang, Y. Xu, and Y. F. Lin*; “Negative Differential Resistance Devices Achieved by Band Structure Engineering in Silicene under Periodic Potentials”, Phys. Rev. Applied 10, 044047.

• M. Li, C. Y. Lin, S. H. Yang, Y. M. Chang, J. K. Chang, F. S. Yang, C. Zhong, W. B. Jian, C. H. Lien, C. H. Ho, H. J. Liu, R. Huang, W. Li*, Y. F. Lin*, and J. Chu; “High Mobilities in Layered InSe Transistors with Indium Encapsulation Induced Surface Charge Doping”, Adv. Mater. 30, 1803690.

• (Invited comments) S. H. Yang, and Y. F. Lin*; “Atomically thin ICs under the Spotlight”, Nat. Electron. 1, 498

• Y. Xu*, H. Sun, A. Liu, H. H. Zhu, W. Li, Y. F. Lin, and Y. Y. Noh*; “Doping: a Key enabler for Organic Transistors”, Adv. Mater. 30, 1801830.

• Y. M. Chang, S. H. Yang, C. Y. Lin, C. H. Chen, C. H. Lien, W. B. Jian, K. Ueno, Y. W. Suen*, K. Tsukagoshi*, and Y. F. Lin*; “Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping”, Adv. Mater. 30, 1706995.

• J. J. Lai, D. Jian, Y. F. Lin, M. M. Ku, and W. B. Jian*; “Electron Transport in the Two-dimensional Channel Material-Zinc Oxide Nanoflake”, Physica B 532, 135.

2017​

• H. L. Tang, M. H. Chiu, C. C. Tseng, S. H. Yang, K. J. Hou, S. Y. Wei, J. K. Huang, Y. F. Lin, C. H. Lien*, and L. J. Li*; “Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors”, ACS Nano 11, 12817.

• Y. Xu*, H. Sun, W. Li, Y. F. Lin*, F. Balestra, G. Ghibaudo, and Y. Y. Noh*; “Exploring the Charge Transport in Conjugated Polymers”, Adv. Mater. 29, 1702729.

• Y. F. Lin, C. H. Chang, T. C. Hung, Z. Liu, J. Fang, and W. B. Jian*; “Nanocontact Disorder in InP Nanowire Devices for the Enhancement of Visible Light and Oxygen Gas Sensitivities”, Procedia IUTAM 21, 33.

• Y. M. Chang, M. L. Lin, T. Y. Lai, C. H. Chen, H. Y. Lee, C. M. Lin, Y. C. Sermon Wu, Y. F. Lin*, and J. Y. Juang*; “Broadband Omnidirectional Light Trapping in Gold-Decorated ZnO Nanopillars Array”, ACS Appl. Mater. Interfaces 9, 11985.

• D. Jian, J. J. Lai, Y. F. Lin*, J. Zhai, I. L Li, F. Tian, S. Wang, P. Hua, M. M. Ku, W. B. Jian*, S. Ruan*, and Z. Tang; “Electron Hopping Transport in 2D Zinc Oxide Nanoflakes”, 2D Mater. 4, 025028.

2016

• C. K. Hsu, C. Y. Lin, W. Li*, H. Sun, Y. Xu*, Z. Hu, Y. M. Chang, Y. W. Suen, and Y. F. Lin*; “The Impact of Electrical Contacts and Contact-Induced Ultralow Noise Amplitudes in Layered Transistors”, 2D Mater. 3, 045015.

• (Invited paper) Y. M. Chang*, C. Y. Lin, Y. F. Lin*, and K. Tsukagoshi*; “Two-dimensional MoTe2 Materials: From Synthesis, Identification, and Charge Transport to Electronic Applications”, Jpn. J. Appl. Phys. 55, 1102A1.

• Y. Xu*, H. Sun, E. Y. Shin, Y. F. Lin, W. Li*, and Y. Y. Noh*; “Planar-Processed Polymer Transistor”, Adv. Mater. 28, 8531.

2015

• Y. F. Lin*, Y. Xu, C. Y. Lin, Y. W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi*; “Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors”, Adv. Mater. 27, 6612.

• Y. F. Lin*, C. H. Chang, T. C. Hung, W. B. Jian*, K. Tsukagoshi, Y. H. Wu, L. Chang, Z. Liu and J. Fang; “Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities”, Sci. Rep. 5, 13035.

• S. Nakaharai*, M. Yamamoto, K. Ueno, Y. F. Lin, S. L. Li, and K. Tsukagoshi*; “Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors”, ACS Nano 9, 5976.

2014

• S. L. Li*, K. Komatsu, S. Nakaharai, Y. F. Lin, M. Yamamoto, X. Duan, and K. Tsukagoshi*; “Thickness Scaling Effect on  Interfacial Barrier and Electrical Contact to Two-dimensional MoS2 Layers”, ACS Nano 8, 12836.

• H. Sun, Q. Wang, Y. Li*, Y. F. Lin, Y. Wang, Y. Yin, Y. Xu, C. Liu, K. Tsukagoshi*;  “Boost up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation”, Sci. Rep. 4, 7227.

• M. Yamamoto*, S. T. Wang, M. Ni, Y. F. Lin, S. L. Li, S. Aikawa, W. B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi*; “Strong Enhancement of Raman Scattering from a Bulk-inactive Vibrational Mode in Few-layer MoTe2”, ACS Nano 8, 3895.

• Y. F. Lin*, Y. Xu, S. T. Wang, S. L. Li, M. Yamamoto, A. A. Ferreira, W. Li, H. Sun, W. B. Jian, S. Nakaharai, K. Ueno, and K. Tsukagoshi*; “Ambipolar MoTe2 Transistor and Their Applications in Logic Circuits”, Adv. Mater. 26, 3263.

• Y. F. Lin*, W. Li, S. L. Li, Y. Xu, K. Komatsu, A. A. Ferreira, and K. Tsukagoshi*; “Barrier Inhomogeneities at Vertically Stacked Hraphene-based Heterostructures”, Nanoscale 6, 795.

2013

• Y. Xu*, C. Liu, W. Scheideler, S. L. Li, W. Li, Y. F. Lin, F. Balestra, G. Ghibaudo, and K. Tsukagoshi*; “Understanding Pentacene Growth Dynamics by Low-frequency Noise Measurement”, IEEE Electron Device Lett.34, 1298.

• S. C. Chiu, J. S. Jhang, Y. F. Lin, S. Y. Hsu, J. Fang, and W. B. Jian*; “Nanocrystal Shape and Nanojunction Effects on Electron Transport in Nanocrystal-assembled Bulks”, Nanoscale 5, 8555.

• S. L. Li*, K. Wakabayashi*, Y. Xu, S. Nakaharai, K. Komatsu, W. W. Li, Y. F. Lin, A. A. Ferreira, and K. Tsukagoshi*; “Coulomb Impurity Induced Thickness-dependent Carrier Scattering in Ultrathin Field-effect Transistors”, Nano Lett.13, 3545.

• W. Li*, S. L. Li, K. Komatsu, A. A. Ferreira, Y. F. Lin, Y. Xu, M. Osada, T. Sasaki, and K. Tsukagoshi*; “Realization of Graphene Field-Effect Transistor with High-κ HCa2Nb3O10 Nanoflake as Top-gate Dielectric”, Appl. Phys. Lett. 103, 023113.

• K. J. Sankaran, Y. F. Lin, W. B. Jian, K. Panda, B. Sundaravel, C. L. Dong, N. H. Tai*, and I. N. Lin*; “Structural and Electrical Properties of n-type Conducting Diamond Nanowires”, ACS Appl. Mater. Interfaces 5, 1294.

• Y. F. Lin*, S. T. Wang, C. C. Pao, Y. C. Li, C. C. Lai, C. K. Lin, S. Y. Hsu, and W. B. Jian*; “Probing into the Metal-graphene Interface by Electron Transport Measurements", Appl. Phys. Lett. 102, 033107.

Before 2013

• S. T. Wang, Y. F. Lin, Y. C. Li, P. C. Yeh, S. J. Tang, B. Rosenstein, T. H. Hsu, X. Zhou, Z. Liu, M. T. Lin, and W. B. Jian*; ‘’Direct Probing of Density of States of Reduced Graphene Xxides in a Wide Voltage Range by Tunneling Junction”, Appl. Phys. Lett. 101, 183110.

• Y. F. Lin*, S. C. Chiu, S. T. Wang, S. K. Fu, C. H. Chen, W. J. Xie, S. H. Yang, C. S. Hsu, J. F. Chen, Zhaoping Liu, W. B. Jian*; “Dielectrophoretic Placement of Nanocrystals, Nanofibers, and Graphene into Nanogap for Electrical Characterizations”, Electrophoresis 33, 2475.

• Y. F. Lin, C. H. Chen, W. J. Xie, S. H. Yang, C. S. Hsu, M. T. Lin, W. B. Jian*; ’’Nano Approach Investigation of Conduction Mechanism in Polyaniline Nanofibers’’, ACS Nano 5, 1541.

• Y. F. Lin, T. H. Chen, C. H. Chang, Y. W. Chang, Y. C. Chiu. H. C. Hung, J. J. Kai, Z. Liu, J. Fang, W. B. Jian*; ’’Electron Transport in High-Resistance Semiconductor Nanowires through Two-probe Measurements’’, Phys. Chem. Chem. Phys. 12, 10928.

• Y. F. Lin, Z. Y. Wu, K. C. Lin, C. C. Chen, W. B. Jian*, F. R. Chen, J. J. Kai; “Nanocontact Resistance and Structural Disorder Induced Resistivity Variation in Metallic Metal-oxide Nanowires”, Nanotechnology 20, 455401.

• Z. Liu, K. Sun, W. B. Jian, D. Xu, Y. F. Lin, J. Fang*; “Soluble InP and GaP Nanowires: Self-seeded, Solution-liquid-solid Synthesis and Electronic Properties”, Chem. Eur. J. 15, 4546.

• Z. Y. Wu, I. J. Chen, Y. F. Lin, S. P. Chiu, F. R. Chen, J. J. Kai, J. J. Lin and W. B. Jian*; “Cross-sectional Shape Modulation of Physical Properties in ZnO and Zn1−xCoxO Nanowires”, New J. Phys. 10, 033017.

• Y. F. Lin and W. B. Jian*; “The Impact of Nanocontact on Nanowire Based Nanoelectronics”, Nano Lett. 8, 3146.

• Y. F. Lin, W. B. Jian*, C. P. Wang, Y. W. Suen, Z. Y. Wu, F. R. Chen, J. J. Kai and J. J. Lin; “Contact to ZnO and Intrinsic Resistances of Individual ZnO Nanowires with a Circular Cross Section”, Appl. Phys. Lett. 90, 223117.

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